A cutting-edge breakthrough in semiconductor device technology is set to transform the future of communication, healthcare, and transportation.
In a significant leap forward, researchers at the University of Bristol have developed a next-generation semiconductor device capable of unlocking the full potential of 6G networks.
This innovation goes far beyond faster data speeds—it opens the door to applications once considered science fiction: instant remote diagnoses, immersive virtual reality, and fully autonomous vehicles gliding through congestion-free cities.
At the heart of this progress is a radical redesign of how semiconductor devices process high-frequency data, a critical requirement for the shift from 5G to 6G.
This evolution could power real-time telemedicine, hyper-responsive smart infrastructure, and even virtual tourism with tactile, lifelike feedback.
But making these experiences a reality hinges on one thing: faster, more powerful, and more efficient semiconductors.
Co-lead author Martin Kuball, Professor of Physics at the University of Bristol, explained: “Within the next decade, previously almost unimaginable technologies to transform a wide range of human experiences could be widely available.
“The possible benefits are also far-reaching, including advances in healthcare with remote diagnostics and surgery, virtual classrooms and even virtual holiday tourism.
“In addition, there is considerable potential for advanced driver assistance systems to improve road safety and industrial automation for greater efficiency. The list of possible 6G applications is endless, with the limit just being human imagination.
“So, our innovative semiconductor discoveries are hugely exciting and will help drive forward these developments at speed and scale.”
Unleashing the power of Gallium Nitride
Central to this innovation is Gallium Nitride (GaN), a material already lauded for its exceptional properties in radio frequency amplifiers.
The international research team has reimagined the architecture of GaN-based devices, making a breakthrough that significantly increases their radio frequency performance.
By identifying a previously misunderstood physical phenomenon – the latch effect – in GaN structures, the researchers have unlocked new levels of efficiency.
This phenomenon was found to enhance the operation of high-frequency transistors, allowing them to perform far beyond previous limits.
Introducing SLCFETs
The team’s experimental approach involved a novel device design known as Superlattice Castellated Field Effect Transistors (SLCFETs).
These devices incorporate over 1,000 ultra-thin fins, each less than 100 nanometres wide, which work together to control and amplify current flow.
SLCFETs demonstrated exceptional results in the W-band frequency range (75 GHz–110 GHz), a crucial spectrum for future 6G networks.
Despite their impressive performance, the underlying physics of SLCFETs has not been fully understood until now. The researchers discovered that the latch effect in the widest fins was key to enabling such high-speed operation.
Engineering precision and reliability
To pinpoint the source of this performance leap, the team used a combination of high-precision electrical measurement and advanced optical microscopy.
Their findings were further validated through a 3D simulation model. Crucially, they also tested the durability of the latch effect under extended use.
The results showed that the devices maintained excellent reliability over time, with no signs of performance degradation.
A thin dielectric coating around each fin was identified as a crucial factor in ensuring this long-term stability, making the latch effect not only a breakthrough in performance but also in practical usability.
Towards a smarter, more connected world
This semiconductor device innovation is a technological enabler for the next generation of global communication systems. With applications ranging from automated transport and remote surgery to AI-driven industrial automation, the potential impact is enormous.
Looking ahead, the research team plans to further increase the power density of these devices, scaling them for broader use across commercial and industrial markets. Collaborations with industry partners are already underway to bring this next-generation technology into practical deployment.
This latest development not only reaffirms the UK’s leadership in semiconductor innovation but also sets the stage for a new era of ultra-connected, intelligent technology ecosystems.
